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BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP171P
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
BSP171 P
SIPMOS® Small-Signal-Transistor
Product Summary
Features VDS -60 V
. P-Channel RDSWmax 0.3
. Enhancement mode l -l .9 A
. Logic level
. Avalanche rated
. dv/dt rated
SOT-223
Type Package Ordering Code Marking 1
BSP 171 P SOT-223 Q67041-S4019 171 P
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
steady state
Continuous drain current ID TA=25 tl) -1.9 A
TA=7O oc1) -1.5
Pulsed drain current onpube TA=25 "C -7.6
Avalanche energy, single pulse EAS /D=-1.9 A, RGS=25 Q 70 m]
/D=-1.9 A,
Reverse diode dv/dt dv/dt goir=t'l/ays, -6 kV/ps
Tj‘max=150 ''C
Gate source voltage l/ss :20 V
Power dissipation Ptot TA=25 tl) 1.8 W
Operating and storage temperature Tj, Tstg -55 ... 150 ''C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 2.0 page 1 2004-01-20
CP""''"
Infineon
lechnologies
BSP171 P
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point Rtrws - - 25 KAN
Thermal resistance, R minimal footprint, - - 110
junction - ambient thJA steady state
6 cm2 cooling areal), - - 70
steady state
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BRwSS Vss--0 V, /D=-250 pA -60 - - V
Vos=VGs,
Gate threshold voltage Vesuh) lrr--- 460 p A -1 -1.5 -2
. VDS='60 V, VGS=0 V,
Zero gate voltage drain current loss T =25 ''C - -0.1 -1 pA
VDS='60 V, VGS=0 V,
Tj=125 "C - -10 -100
Gate-source leakage current less VGs=-20 V, VDS=0 V - -10 -100 nA
. . Vss=-4.5 V,
Drain-source on-state resistance Rosmn) - - 0.3 0.45 9
lro---1.5 A
VGS='10 V,
ID=-1.9A - 0.21 0.3
V >2 I R ,
Transconductance " I 38' I DI DS(on)max 1.4 2.7 - S
I o=-1 .5 A
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
