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BSO307NINFINEON ?N/a732avaiDual N-Channel SIPMOS Small-Signal Tr...
BSO307NInfineonN/a17500avaiDual N-Channel SIPMOS Small-Signal Tr...


BSO307N ,Dual N-Channel SIPMOS Small-Signal Tr...FeaturesDrain source voltage 30 VV• Dual N channelDSDrain-Source on-state resistance 0.05• Enhancem ..
BSO307N ,Dual N-Channel SIPMOS Small-Signal Tr...CharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚CGS D ..
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BSO307N
Dual N-Channel SIPMOS Small-Signal Tr...
( Infineon
technologies
Preliminary Data
SIPMOS® Small-Signal-Transistor BSO 307N
Features Product Summary
. Dual N channel Drain source voltage VDS 30 V
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.05 Q
. Avalanche rated Continuous drain current ID 5 A
q Logic Level
.dv/dtrated rc-I- 6: 8:101 2 3135 i s x l
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C2C4 (iii) i302 VPS05121
Top View SlS00058
Type Package Ordering Code
BSO 307 N so 8 Q67000-S4012
Maximum Ratings, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current, one channel active ID 5 A
TA = 25 (
Pulsed drain current, one channel active leuIse 20
TA = 25 (
Avalanche energy, single pulse EAS 55 mJ
ID=5A, VDD=25V, RGS=25§2
Avalanche current,periodic limited by ijax IAR 5 A
Avalanche energy, periodic limited by Timax EAR 0.2 mJ
Reverse diode d v/dt dv/dt 6 kV/ps
IS = 5 A, VDS = 24 V, di/dt = 200 Alps,
ijax = 150 ''C
Gate source voltage VGS :20 V
Power dissipation, one channel active Ptot 2 W
TA = 25 (
Operating temperature Ti -55...+150 (
Storage temperature Tsta -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
( £11933 BSO307N
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 35 K/W
Thermal resistance @ 10 sec., min. footprint RthUA) - - 100
Thermal resistance @ 10 sec., Rth(JA) - - 62.5
6 cm2 cooling area 1)
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGS = 0 V, ID = 0.25 mA, r, = 25 (
Gate threshold voltage, VGS = VDs VGS(th) 1.2 1.6 2
ID = 20 pA
Zero gate voltage drain current IDSS pA
VDS=30V,VGS=0V,TJ-=25°C - 0.1 1
VDS=30V, VGS=0V, Tj=150°C - 10 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(0n) Q
VGS = 4.5 V, ID = 4.1 A - 0.05 0.075
VGs = 10 V, ID = 5 A - 0.035 0.05
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
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