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BSO303P-BSO303P . Fast Delivery,Good Price
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BSO303PINFINEONN/a5450avaiLow Voltage MOSFETs
BSO303P . |BSO303PInfineonN/a740avaiLow Voltage MOSFETs


BSO303P ,Low Voltage MOSFETsCharacteristics-30 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =-250µAGS D-1 -1.5 -2Gate th ..
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BSO303P-BSO303P .
Low Voltage MOSFETs
Preliminary dataBSO303P
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature

• Dual P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSO303P
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO303P
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO303P
1 Power dissipation
tot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2 BSO303P
tot
2 Drain current
D = f (TA)
parameter: |VGS|≥ 10 V
-1
-2
-3
-4
-5
-6
-7
-8
-10
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , T = 25 °C
-2 -10
-1 -10 -10 -10 -10
4 Transient thermal impedance
thJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSO303P
thJS
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
55
60
7 Typ. transfer characteristics
D= f ( VGS ); |VDS
parameter: tp = 80 µs
10
15
20
25
35
Preliminary dataBSO303P
9 Drain-source on-resistance
DS(on) = f(Tj)
parameter: ID = -8.2 A, VGS = -10 V
10
12.5
15
17.5
20
22.5
25
30
DS(on)
10 Typ. gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
12 Forward character. of reverse diode
F = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO303P
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
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