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BSO220NINFINEONN/a3000avaiDual N-Channel SIPMOS Small-Signal Tr...


BSO220N ,Dual N-Channel SIPMOS Small-Signal Tr...FeaturesDrain source voltage 20 VV• Dual N ChannelDSDrain-Source on-state resistance 0.13• Enhancem ..
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BSO220N
Dual N-Channel SIPMOS Small-Signal Tr...
( Infineon
technologies
Preliminary Data
SIPMOS© Small-Signal-Transistor BSO 220N
Features Product Summary
. Dual N Channel Drain source voltage Vros 20 V
. Enhancement mode Drain-Source on-state resistance RDS(on) 0.13 f2
. Avalanche rated Continuous drain current ID 3.2 A
q Logic Level
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Top View SISOOOSB
Type Package Ordering Code
BSO220N SO 8 Q67000-S4010
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current, one channel active ID 3.2 A
TA = 25 (
Pulsed drain current, one channel active leuIse 12.8
TA = 25 (
Avalanche energy, single pulse EAS 15 mJ
ID = 3.2 A, VDD = 25 V, Rss = 25 Q
Avalanche current,periodic limited by Timex [AR 3.2 A
Avalanche energy, periodic limited by Timax EAR 0.2 mJ
Reverse diode d v/dt dv/dt 6 kV/ps
ls = 3.2 A, bbs = 24 V, di/dt = 200 Alps
Gate source voltage VGS i20 V
Power dissipation, one channel active Ptot 2 W
TA = 25 (
Operating temperature Ti -55 ... +150 (
Storage temperature Tstq -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet 1 05.99
( !eirfj!,otgty, BSO220N
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 45 KNV
Thermal resistance @ 10 sec., min. footprint RWA) - - 100
Thermal resistance @ 10 sec., Rth(JA) - - 62.5
6 cm2 cooling area 1)
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter . Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 20 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2
ID = 10 pA
Zero gate voltage drain current bss pA
1/bs=201/,i/Gs=01/,Tj=2r'C - 0.1 1
VDS=20V, VGS=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(0n) Q
VGS = 4.5 V, ID = 2.6 A - 0.13 0.2
VGS = 10 V, ID = 3.2 A - 0.08 0.13
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
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