BSO130P03S ,OptiMOS MOSFET, -30V, SO-8, Ron =13mW, 11.3A, LLFeaturesV -30 VDS• P-ChannelR 13mΩDS(on),max• Enhancement modeI -11.3 AD• Logic level• 150°C operat ..
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BSO130P03S
OptiMOS MOSFET, -30V, SO-8, Ron =13mW, 11.3A, LL
CP""''"
Infineon
lechnologies
BSO130P03S
optiMosf-P Small-Signal-Transistor
Product Summary
Features VDS -30 V
. P-Channel RDSWmax 13 m9
. Enhancement mode l -l 1.3 A
. Logic level
. 150°C operating temperature
. Avalanche rated
. dv/dt rated
. Ideal for fast switching buck converter
Type Package Ordering Code Marking
BSO130P03S P-DSO-8 Q67042-S4233 130P3S
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
S10 secs steady state
Continuous drain current ID TA=25 tl) -11.3 -9.2 A
TA=7O oc1) -9.1 -7.4
Pulsed drain current I Mum TA=25 002) -45
Avalanche energy, single pulse EAS ID=11.3 A, RGS=25 f2 148 mJ
ID=11.3 A, VDS=20 V,
Reverse diode dv/dt dv/dt di/dt=-200 Alps, -6 kV/ps
Trmax=150 ''C
Gate source voltage VGS :25 V
Power dissipation Pm, TA=25 °C1) 2.36 1.56 W
Operating and storage temperature Ts, Tstg -55 ... 150 'C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.0 page 1 2004-01-21
CP""''"
Infineon
lechnologies
BSO130P03S
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point Rmos - - 35 KAN
Thermal resistance, R minimal footprint, - - 110
junction - ambient thJA tps10 s
minimal footprint, - - 150
steady state
6 cm2 cooling areal), - - 53
tps10 s
6 cm2 cooling areal), - - 80
steady state
Electrical characteristics, at Tr=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, I D=-25OuA -3O - - V
Gate threshold voltage Vsam Vns--blss, -1 -1 5 -2 2
( ) ID=-14O pA . .
V =-30 V, V =0 V,
Zero gate voltage drain current loss T382 0 GS - -O.1 -1 pA
j- 5 C
Vos=-30 V, Vss--0 V,
Tj=125 °C - -10 -100
Gate-source leakage current I GSS VGS=-25 V, VDS=0 V - -10 -100 nA
. . Vss=-10 V,
Drain-source on-state resistance Roswn) - - 9.9 13.0 mg
ID---11.3 A
V >2ll R ,
Transconductance " I 38' I DI DS(on)max 14 27 - S
I o=-9.5 A
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 2
