BSC079N03S ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =30 µ ..
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BSC079N03S
OptiMOS®2
technologies BSCO79N03SG
optiMotsh Power-Transistor
Product Summary
Features VDS 30 V
. Fast switching MOSFET for SMPS Rosmmax 7.9 mn
. Optimized technology for notebook DC/DC converters ID 40 A
. Qualified according to JEDECI) for target applications
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM) P-TDSON-8
. Very low on-resistance R DS(on)
. Superior thermal resistance
. Avalanche rated
. Pb-free plating; RoHS compliant
s T B D
Type Package Ordering Code Marking s z 1 D
BSCO79NO3S G P-TDSON-8 Q67042 S4290 079N03S 2i,1 :3
Maximum ratings, at Tj=25 "C, unless othen/vise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID Tc=25 'C 40 A
Tc=100 ''C 40
TA=25 °C,
RthJA=45 K/WZ) 14.6
Pulsed drain current lupulse TC=25 °C3) 160
Avalanche energy, single pulse E AS I 0:40 A, RGS=25 Q 120 mJ
I 0:40 A, Vos=24 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=150 ''C
Gate source voltage VGS :20 V
Power dissipation Ptot TC=25 ''C 60 W
TA=25 °C,
RmJA=45 K/W2) 2.8
Operating and storage temperature Ti, Tstg -55 ... 150 "C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.01 page 1 2004-12-15
technologies BSC079N03SG
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rma: - - 2.1 K/W
Thermal resistance, RmJA minimal footprint - - 62
junction - ambient 6 cm2 cooling areaz) - - 45
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BRmSS b'ss=0 V, I D=1 mA 30 - - v
Gate threshold voltage Vesah) VDS=VGS, ID=30 MA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss T382 0 GS - 0.1 1 pA
j- 5 C
VDS=30 V, Vss--0 V,
Tj=125 °C - 10 100
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - 10 100 nA
Drain-source on-state resistance Rros(on) Vss--4.5 V, I D--40 A - 9.3 11.6 mg
VGS=10 V, lo--40 A - 6.6 7.9
Gate resistance Rs - 1 - Q
V >2 I R ,
Transconductance " I PSI I DI DS(on)max 31 62 - S
lro--40 A
“J-STDZO and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3
Rev. 1.01
page 2
