BSC059N03S ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 30 - - V(BR)DSS GS DV V =V , I =35 ..
BSC059N03S G , OptiMOS™2 Power-Transistor
BSC059N03SG , OptiMOS™2 Power-Transistor
BSC059N03SG , OptiMOS™2 Power-Transistor
BSC059N03SG , OptiMOS™2 Power-Transistor
BSC059N03SG , OptiMOS™2 Power-Transistor
BYW98-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODEFEATURES AND BENEFITSn Very low conduction lossesn Negligible switching lossesn Low forward and rev ..
BYW98-200RL ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODEFEATURES AND BENEFITSn Very low conduction lossesn Negligible switching lossesn Low forward and rev ..
BYW99P-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESSUITED FOR SMPSA1VERY LOW FORWARD LOSSESKNEGLIGIBLE SWITCHING LOSSESHIGH SURGE CURRENT CAPA ..
BYW99PI-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI 35 AF(RMS)RMS forward current Per diodeI 15 AF ..
BYW99W200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI 35 AF(RMS)RMS forward current Per diodeI 15 AF ..
BYW99-W200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURESSUITED FOR SMPSA1VERY LOW FORWARD LOSSESKNEGLIGIBLESWITCHING LOSSESHIGH SURGE CURRENT CAPAB ..
BSC059N03S
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
BSC059N03S
optiMosh Power-Transistor
Product Summary
Features VDS 30 V
. Fast switching MOSFET for SMPS RDSWmax 5.5 m9
. Optimized technology for notebook DC/DC converters l 50 A
. Qualified according to JEDEC1 for target applications
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM) P-TDSON-8
. Very low on-resistance R DS(on)
. Superior thermal resistance
. Avalanche rated
. dv/dt rated
Type Package Ordering Code Marking
BSC059N03S P-TDSON-8 Q67042-S4222 59N03S
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 ''C 50 A
Tc=100 'C 46
TA=25 'C,
RWA=45 KNV2) 17.5
Pulsed drain current lro,pulse Tc=25 °C3) 200
Avalanche energy, single pulse EAS ID=50 A, Rss--25 Q 150 mJ
[0:50 A, Vos=24 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=150 ''C
Gate source voltage Vss t20 V
Power dissipation Ptot Tc=25 "C 48 W
TA=25 'C,
RWA=45 KNVZ) 2.8
Operating and storage temperature Ts, Tstg -55 ... 150 "C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.11 page 1 2004-02-05
CP""''"
Infineon
lechnologies
BSC059N03S
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 2.6 K/W
Thermal resistance, R NA minimal footprint - - 62
junction - ambient 6 cm2 cooling area'" - - 45
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage Vsath) VDS=V03, ID=35 HA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=30 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Rosmn) VGS=4.5 V, I 0:50 A - 6.9 8.6 m9
Vss=10 V, /D=50 A - 4.6 5.5
Gate resistance RG - 0.9 - f2
V >2ll R ,
Transconductance " I PSI I DI DS(on)max 42 84 - S
1=50 A
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev.1.11
page 2
