BSC032N03S ,Low Voltage MOSFETsapplications• N-channel• Logic levelP-TDSON-8• Excellent gate charge x R product (FOM)DS(on)• Very ..
BSC032N03S ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 30 - - V(BR)DSS GS DV V =V , I =70 ..
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BSC032N03S
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
BSC032N03S
optiMosh Power-Transistor
Product Summary
Features VDS 30 V
. Fast switching MOSFET for SMPS RDSWmax 3.2 m n
. Optimized technology for notebook DC/DC converters l 50 A
. Qualified according to JEDEC1 for target applications
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM) P-TDSON-8
. Very low on-resistance R DS(on)
. Superior thermal resistance
. Avalanche rated
. dv/dt rated
Type Package Ordering Code Marking
BSC032N03S P-TDSON-8 Q67042-S4219 32N03S
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 ''C 50 A
Tc=100 'C 50
TA=25 'C,
RWA=45 KNV2) 23
Pulsed drain current lro,pulse Tc=25 °C3) 200
Avalanche energy, single pulse EAS ID=50 A, Rss--25 n 550 mJ
[0:50 A, Vos=24 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=150 ''C
Gate source voltage Vss t20 V
Power dissipation Ptot Tc=25 "C 78 W
TA=25 'C,
RWA=45 KNVZ) 2.8
Operating and storage temperature Ts, Tstg -55 ... 150 "C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.11 page 1 2004-02-05
CP""''"
Infineon
lechnologies
BSC032N03S
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 1.6 K/W
Thermal resistance, R NA minimal footprint - - 62
junction - ambient 6 cm2 cooling area'" - - 45
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage Vsath) VDS=VGS, ID=7O pA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=30 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Rosmn) VGS=4.5 V, I 0:50 A - 3.9 4.9 m9
Vss=10 V, /D=50 A - 2.7 3.2
Gate resistance RG - 0.6 - 9
V >2ll R ,
Transconductance " I PSI I DI DS(on)max 57 113 - S
1=50 A
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev.1.11
page 2
