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BQ3287MT-I |BQ3287MTIBENCN/a199avaiRTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ3287MT-I |BQ3287MTITIN/a1000avaiRTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ3287MT-SB2 |BQ3287MTSB2TIN/a1000avaiRTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ3287MT-SB2 |BQ3287MTSB2BQN/a59avaiRTC Module with 114x8 NVSRAM, RAM Clear Input on A Version


BQ3287MT-I ,RTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ3287MT-I ,RTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ3287MT-SB2 ,RTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ3287MT-SB2 ,RTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
BQ4010YMA150 ,8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
BQ4010YMA-150 ,8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
BUZ41A ,4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFETFeaturesMOSFET• 4.5A, 500V[ /TitleThis is an N-Channel enhancement mode silicon gate power = 1.500Ω ..
BUZ42 ,4A/ 500V/ 2.000 Ohm/ N-Channel Power MOSFETFeaturesMOSFET• 4A, 500V[ /TitleThis is an N-Channel enhancement mode silicon gate power = 2.000Ω•r ..
BUZ50A ,N-Channel SIPMOS Power TransistorBUZ 50 A® SIPMOS Power Transistor• N channel• Enhancement modePin 1 Pin 2 Pin 3G D SType V I R Pack ..
BUZ50A ,N-Channel SIPMOS Power TransistorCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ50A ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 1000 - -GS ..
BUZ50B ,N-Channel SIPMOS Power TransistorBUZ 50 B® SIPMOS Power Transistor• N channel• Enhancement modePin 1 Pin 2 Pin 3G D SType V I R Pack ..


BQ3287MT-I-BQ3287MT-SB2
RTC Module with 114x8 NVSRAM, RAM Clear Input on A Version
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