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Partno Mfg Dc Qty AvailableDescript
BQ29419TIN/a37avaiVoltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110
BQ29419PWTIN/a124avaiVoltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110
BQ29419PWG4TEXASN/a39avaiVoltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110
BQ29419PWG4TIN/a52avaiVoltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110


BQ29419PW ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110ELECTRICAL CHARACTERISTICSover recommended operating free-air temperature range, T = 25°C (unless o ..
BQ29419PWG4 ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110FEATURES DESCRIPTIONThe bq2941x is a secondary overvoltage protection• 2-, 3-, or 4-Cell Secondary ..
BQ29419PWG4 ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
BQ29440DRBR ,Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SON -40 to 85.(3) Large tape and reel quantity is 3,000 units.(4) Small tape and reel quantity is 250 units.THER ..
BQ294582DRVR ,Overvoltage Protection for 2-Series and 3-Series Cell Li-Ion Batteries, with 4.225v OVP 6-WSON -40 to 85Features 3 DescriptionThe bq2945xx family of products is a secondary-level1• 2-Series and 3-Series ..
BQ2954 ,Li-Ion Switchmode Charge Management ICBlock DiagramCharge Qualification
BUY71 , Bipolar NPN Device
BUZ10 ,Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220BUZ10®N - CHANNEL 50V - 0.06Ω - 23A TO-220STripFET™ MOSFETTYPE V R IDSS DS(on) DBUZ10 50 V < 0.0 ..
BUZ100 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = -40 °C 50 - -GS ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.015R Ω• Enhancem ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)CharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
BUZ100SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..


BQ29419-BQ29419PW-BQ29419PWG4
Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110
Not Recommended for New Designs
bq29410, bq29411, bq29412
bq29413, bq29414
bq29415, bq29419
www.ti.com
SLUS669G –AUGUST 2005–REVISED AUGUST 2008
VOLTAGE PROTECTION FOR 2-, 3-, OR 4-CELL Li-Ion BATTERIESnd -LEVEL PROTECTION)
Checkfor Samples: bq29410, bq29411, bq29412, bq29413, bq29414, bq29415, bq29419
1FEATURES DESCRIPTION

The bq2941xisa secondary overvoltage protection• 2-, 3-,or 4-Cell Secondary Protection IC for 2-, 3-,or 4-cell lithium-ion battery packs that• Low Power Consumption ICC<2 µA incorporatesa high-accuracy precision overvoltage[VCELL(ALL)< V(PROTECT)] detection circuit.It includesa programmable delay Fixed High Accuracy Overvoltage Protection circuitfor overvoltage detection time.
Threshold
FUNCTION– bq29410= 4.35V

Each cellina multiple-cell packis comparedto an
ic,good price


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