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Partno Mfg Dc Qty AvailableDescript
BQ2018TI/BBN/a157avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
BQ2018SN-E1 |BQ2018SNE1TIN/a51avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
BQ2018SN-E1TR |BQ2018SNE1TRTIN/a22303avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
BQ2018TS-E1 |BQ2018TSE1BENCN/a143avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
BQ2018TS-E1 |BQ2018TSE1BBN/a10avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
BQ2018TS-E1TR |BQ2018TSE1TRTIN/a9267avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
BQ2018TS-E1TRG4 |BQ2018TSE1TRG4TIN/a650avaiMulti-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) 8-TSSOP -20 to 70


BQ2018SN-E1TR ,Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)Not Recommended for New Designsbq2018Power Minder™ ICThe bq2018 also
BQ2018TS , Power Minder™ IC
BQ2018TS-E1 ,Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)Functional DescriptionREG Regulator outputGeneral OperationREG is the output of the operational tra ..
BQ2018TS-E1 ,Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)features 128 bytes
BQ2018TS-E1TR ,Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)General Descriptionof NVRAM registers. The upper 13bytes of NVRAM contain the capac-➤ Multifunction ..
BQ2018TS-E1TRG4 ,Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) 8-TSSOP -20 to 70block diagram of the bq2018, and Tablesystem. HDQ is open drain and requires a1 outlines the bq2018 ..
BUF08821 ,Programmable Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank MemoryELECTRICAL CHARACTERISTICSBoldface limits apply over the specified temperature range, T =–40°C to + ..
BUF08821AIPWPR ,8-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 20-HTSSOP -40 to 95FEATURES DESCRIPTIONThe BUF08821 offers eight programmable gamma234• 10-BIT RESOLUTIONchannels plus ..
BUF08821AIPWPRG4 , Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
BUF08821BIPWPR ,8-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 20-HTSSOP -40 to 95FEATURES PRODUCTOUT222-Channel Gamma Correction Buffer BUF2282116-Channel Gamma Correction Buffer B ..
BUF08832AIPWPR ,8-CH Gamma-Voltage Generator and High Slew Rate Vcom with Integrated Two-Bank Memory 20-HTSSOP -40 to 95ELECTRICAL CHARACTERISTICSBoldface limits apply over the specified temperature range, T =–40°C to + ..
BUF11702 ,10+1 Channel High Current BufferSLOS359F − MARCH 2001 − REVISED MAY 2004       


BQ2018-BQ2018SN-E1-BQ2018SN-E1TR-BQ2018TS-E1-BQ2018TS-E1TR-BQ2018TS-E1TRG4
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ)
Features Multifunction charge/discharge
counter Resolves signals less than 12.5µV Internal offset calibration im-
proves accuracy 1024 bitsof NVRAM configuredas
128x8 Internal temperature sensor for
self-discharge estimation Single-wireserial interface Dual operatingmodes: Operating: <80µA Sleep: <10µA REG output for low-cost mi-
croregulation Internal timebase eliminates ex-
ternal components 8-pin TSSOPor SOIC allows bat-
tery pack integration
General Description

The bq2018isa low-cost charge/dis-
charge counter peripheral packagedin 8-pin TSSOPor SOIC.It works
withan intelligent host controller, pro-
viding state-of-charge informationfor
rechargeablebatteries.
The bq2018 measures the voltage
drop acrossa low-value series sense
resistor between the negative termi-
nalof the battery and the battery
pack ground contact. By usingtheac-
cumulated countsin the charge,
discharge, and self-discharge regis-
ters,an intelligent host controller can
determine battery state-of-chargein-
formation. To improve accuracy,an
offset count registeris available. The
system host controlleris responsible
forthe register maintenanceby reset-
ting the charge in/out and self-
dischargeregistersas needed.
The bq2018 also features 128 bytes NVRAM registers. The upper13
bytesof NVRAM contain the capac-
ity monitoring and status informa-
tion. The RBI input operates from external power storage source
suchasa capacitorora seriescellin
the battery pack, providing register
nonvolatilityfor periods when the
batteryis shortedto groundor when
the battery charge stateisnot suffi-
cientto operate the bq2018. During
this mode, the register backup cur-
rent islessthan 100nA.
Packagedinan 8-pin TSSOPor
SOIC, the bq2018is small enoughfitin the crevice between twoA-
size cellsor within the widthofa
prismatic cell.
REG Regulator output
VCC Supply voltage input
VSS Ground
HDQ Data input/output
WAKE Wake-up output
SR1 Current sense input1
SR2 Current sense input2
RBI Register backup input
Pin Connections Pin Names
bq2018
Power Minder™ IC

SLUS003–JUNE 1999 C
Not Recommended for New Designs
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