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Partno	Mfg	Dc	Qty	Available	Descript
BPW77NA	VISHAY	N/a	10000	avai	Photo Detectors
BPW77NB	VISHAY	N/a	10000	avai	Photo Detectors

BPW77NA ,Photo DetectorsElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Symbol M ..
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BPW77NA-BPW77NB
Photo Detectors
BPW77N
Document Number 81527
Vishay Semiconductors
www.vishay.com
Silicon NPN Phototransistor
Description
BPW77N is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO-18 hermeti-
cally sealed metal case.
Its glass lens featuring a viewing angle of ±10°
makes it insensible to ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
Features Hermetically sealed case Lens window Narrow viewing angle ϕ = ± 10° Exact central chip alignment Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups Lead-free component Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified

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