BPW16N ,Silicon NPN Phototransistor Document Number 815154 (5) Rev. 2, 20-May-99S – Relative SensitivityrelBPW16NVishay Semicondu ..
BPW17N ,Silicon NPN Phototransistor Document Number 815164 (5) Rev. 2, 20-May-99S – Relative SensitivityrelBPW17NVishay Semicondu ..
BPW21 ,Silicon PN PhotodiodeAbsolute Maximum RatingsT = 25
BPW16N
Silicon NPN Phototransistor
BPW16N
Vishay Semiconductorswww.vishay.comDocument Number 81515
Silicon NPN Phototransistor
DescriptionBPW16N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with flat window.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features Miniature T– flat clear plastic package Very wide viewing angle ϕ = ± 40 Suitable for 0.1” (2.54 mm) center to center spac-
ing Suitable for visible and near infrared radiation Compatible with IR diode CQY36N
94 8638
ApplicationsDetector in electronic control and drive circuits
Absolute Maximum RatingsTamb = 25C
