| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BOBCATB |
NS|National Semiconductor |
N/a |
550 |
 |
|
BP 104S , Neu: Silizium-PIN-Fotodiode, New: Silicon PIN Photodiode
BP04KE , Side Actuated DIP Switcehs
BP04KT , Side Actuated DIP Switcehs
BP103 , NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BP103-2 , NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BU508AF , 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE.
BU508AF , 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE.Absolute maximum ratingSymbol Parameter Value UnitVCollector-emitter voltage (V = 0) 1500 VCESBEV C ..
BU508AF , 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE.Electrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitV = 1500VCollector cu ..
