| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BMS200S |
BW |
N/a |
2000 |
 |
|
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
lllhllEiiiiC:
DESCRIPTION The BN1A4P is designed for use i ..
BN1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1F4M ,The BN1F4M is designed for use in medium speed switching circuit.PNP SILICON TRANSISTOR
BN1F4M
DESCRIPTION The BN1F4M is designed for use in medium speed swit ..
BU4522AF ,Silicon Diffused Power Transistor
BU4528BF , Dual monostable multivibrator
BU4530AW ,Silicon Diffused Power Transistor
