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Partno	Mfg	Dc	Qty	Available	Descript
BLT81	PHILIPS	N/a	120	avai	UHF power transistor
BLT81	X	N/a	1000	avai	UHF power transistor

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BLT81
UHF power transistor

Philips Semiconductors Product speciﬁcation
UHF power transistor BLT81
FEATURES SMD encapsulation Gold metallization ensures excellent reliability.
APPLICATIONS Hand-held radio equipment in the 900 MHz
communication band.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.
PINNING - SOT223
QUICK REFERENCE DATA
RF performance at Ts≤60 °C in a common emitter test circuit (see Fig.7).
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics” Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT81
CHARACTERISTICS =25 °C unless otherwise speciﬁed.
Note Measured under pulsed conditions: tp≤ 200 μs; δ≤ 0.02.
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT81
APPLICATION INFORMATION
RF performance at Ts≤60 °C in a common emitter test circuit (see note1 and Fig.7).
Note Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT81 is capable of withstanding a load mismatch corresponding to VSWR=50: 1 through all phases under the
following conditions: f= 900 MHz; VCE=9 V; PL= 1.2W;Ts≤60 °C.
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT81
Test circuit information

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