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BLF7G27LS-90P |BLF7G27LS90PNXPN/a3avaiPower LDMOS transistor


BLF7G27LS-90P ,Power LDMOS transistorapplications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanceTypical RF perfo ..
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BLF7G27LS-90P
Power LDMOS transistor
1. Product profile
1.1 General description
W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
BLF7G27L-90P;
BLF7G27LS-90P
Power LDMOS transistor
Rev. 2 — 10 November 2011 Product data sheet
Table 1. Typical performance

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
IS-95 2500to 2700 720 28 16 18.5 29 46[1] -
Single carrier W-CDMA 2500to 2700 720 28 25 18.5 35 36[2]
NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
2. Pinning information

[1] Connected to flange.
3. Ordering information

4. Limiting values

Table 2. Pinning
BLF7G27L-90P (SOT1121A)
BLF7G27LS-90P (SOT1121B)
Table 3. Ordering information

BLF7G27L-90P - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT1121A
BLF7G27LS-90P- earless flanged LDMOST ceramic package; 4 leads SOT1121B
Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 18 A
Tstg storage temperature 65 +150 C junction temperature - 225 C
NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
5. Thermal characteristics

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =720 mA; PL=90W (CW); f= 2500 MHz.
Table 5. Thermal characteristics

Rth(j-c) thermal resistance from junction to case Tcase =80 C; PL =16W 0.4 K/W
Table 6. Characteristics

Tj = 25 C; per section unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID= 0.6 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 60 mA 1.5 1.8 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 1.4 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
9.6 11.5 - A
IGSS gate leakage current VGS =11 V; VDS=0V - - 150 nA
gfs forward transconductance VDS =10V; ID =60 mA - 0.53 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; = 2100 mA
-0.24 - 
Table 7. Functional test information

Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1= 2500 MHz; f2= 2700 MHz; RF performance at VDS =28V; IDq =720 mA;
Tcase =25 C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
PL(AV) average output power - 16 - W power gain PL(AV) =16W 17 18.5- dB
RLin input return loss PL(AV) =16W - 15- dB drain efficiency PL(AV) =16W 25 29 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =16W - 46 41 dBc
NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
7.2 Single carrier IS-95

Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8- 13).
PAR= 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
NXP Semiconductors BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
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