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BLF6G20LS-110
Power LDMOS transistor
Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, supply voltage of 28 V and an IDq of 900 mA: Average output power=25W Power gain=19 dB Efficiency=32% IMD3= −34 dBc ACPR= −38 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Rev. 03 — 13 January 2009 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 °C in a common source class-AB production test circuit.
2-carrier W-CDMA 1930 to 1990 28 25 19 32 −34[1] −38[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Pinning information[1] Connected to flange.
Ordering information Limiting values
Table 2. Pinning
BLF6G20-110 (SOT502A) drain gate source [1]
BLF6G20LS-110 (SOT502B) drain gate source [1]
sym112
sym112
Table 3. Ordering informationBLF6G20-110 - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF6G20LS-110- earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 29 A
Tstg storage temperature −65 +150 °C junction temperature - 225 °C
NXP Semiconductors BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor Thermal characteristics Characteristics Application information
7.1 Ruggedness in class-AB operationThe BLF6G20-110 and BLF6G20LS-110 are capable of withstanding a load mismatch
corresponding to VSWR=10: 1 through all phases under the following conditions:
VDS=28 V; IDq= 900 mA; PL= 110W (CW); f= 1990 MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 °C;=25 W (CW)
BLF6G20-110 0.52 K/W
BLF6G20LS-110 0.45 K/W
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;ID= 150 mA 1.4 2 2.4 V
VGSq gate-source quiescent voltage VDS =28V;ID= 950 mA 1.6 2.1 2.6 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 μA
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V
22.3 27 - A
IGSS gate leakage current VGS=13 V; VDS=0V - - 450 nA
gfs forward transconductance VDS =10V; ID= 7.5A - 10.5 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V;= 5.25A 0.1 0.160 Ω
Crs feedback capacitance VGS =0V; VDS =28V;
f=1MHz 2.1 - pF
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 1932.5 MHz; f2 = 1942.5 MHz; f3 = 1977.5 MHz; f4 = 1987.5 MHz; performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 25 - W power gain PL(AV) = 25 W 18 19 - dB drain efficiency PL(AV) = 25 W 28 32 - %
IMD3 third order intermodulation distortion PL(AV) = 25 W - −34 −28 dBc
ACPR adjacent channel power ratio PL(AV) = 25 W - −38 −33 dBc
NXP Semiconductors BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
7.2 One-tone CW
7.3 Two-tone CW
NXP Semiconductors BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor Test information[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
[3] AVX or capacitor of same quality.
Table 8. List of components (see Figure4). multilayer ceramic chip capacitor 8.2 pF [1] multilayer ceramic chip capacitor 10 pF [1] electrolytic capacitor 100 μF; 63 V
C4, C8 multilayer ceramic chip capacitor 4.7 μF; 25 V [2]
C5, C7, C12, C13 multilayer ceramic chip capacitor 220 nF; 50 V [3]
C6, C10, C11 multilayer ceramic chip capacitor 13 pF [1] multilayer ceramic chip capacitor 330 nF; 50 V [3]
C14 multilayer ceramic chip capacitor 1.0 pF [1]
C15 multilayer ceramic chip capacitor 1.5 pF [1]
C16 multilayer ceramic chip capacitor 0.6 pF [1] BLF6G20-110 or BLF6G20LS-110 - SMD resistor 1.0Ω SMD resistor 2.7Ω
NXP Semiconductors BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
