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BLF6G10LS-200RN
Power LDMOS transistor
Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR=7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA: Average output power=40W Power gain=20 dB Efficiency= 28.5% ACPR= −39 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLF6G10-200RN;
BLF6G10LS-200RN
Power LDMOS transistor
Rev. 02 — 21 January 2010 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 °C in a class-AB production test circuit.
2-carrier W-CDMA 869 to 894 28 40 20 28.5 −39[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G10(LS)-200RN
Power LDMOS transistor
1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 700 MHz to 1000 MHz frequency range.
Pinning information[1] Connected to flange.
Ordering information Limiting values
Table 2. Pinning
BLF6G10-200RN (SOT502A)1drain
2gate
3source [1]
BLF6G10LS-200RN (SOT502B)1drain
2gate
3source [1]
Table 3. Ordering informationBLF6G10-200RN - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF6G10LS-200RN- earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 49 A
Tstg storage temperature −65 +150 °C junction temperature - 225 °C
NXP Semiconductors BLF6G10(LS)-200RN
Power LDMOS transistor Thermal characteristics Characteristics Application information
7.1 Ruggedness in class-AB operationThe BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are
capable of withstanding a load mismatch corresponding to VSWR= 10 : 1 through all
phases under the following conditions: VDS =28V; IDq =1400mA; PL= 200 W; 894MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 °C; =40W
BLF6G10-200RN 0.50 K/W
BLF6G10LS-200RN 0.35 K/W
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.9 mA 65 --V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 270 mA 1.4 2.0 2.4 V
VGSq gate-source quiescent voltage VDS =28 V; = 1620 mA
1.7 2.2 2.7 V
IDSS drain leakage current VGS =0V; VDS=28V --4.2 μA
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V 48 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 420 nA
gfs forward transconductance VDS =10V; ID =9.45A 11 18 26 S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =9.45A
0.012 0.07 0.093 Ω
Crs feedback capacitance VGS =0V; VDS =28V;
f= 1MHz -pF
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1= 871.5 MHz; f2= 876.5 MHz; f3= 886.5 MHz; f4= 891.5 MHz; performance at VDS =28V; IDq= 1400 mA; Tcase =25 °C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 40 - W power gain PL(AV) = 40 W 19 20 - dB
IRL input return loss PL(AV) = 40 W - −6.4 −4.5 dB drain efficiency PL(AV) = 40 W 25 28.5 - %
ACPR adjacent channel power ratio PL(AV) = 40 W - −39.4 −36 dBc
NXP Semiconductors BLF6G10(LS)-200RN
Power LDMOS transistor
7.2 One-tone CW
7.3 Two-tone CWNXP Semiconductors BLF6G10(LS)-200RN
Power LDMOS transistor
7.4 2-carrier W-CDMA Test informationNXP Semiconductors BLF6G10(LS)-200RN
Power LDMOS transistor[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
Table 8. List of componentsSee Figure 6 and Figure7.
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor 68 pF [1] solder vertically multilayer ceramic chip capacitor 13 pF [1] solder vertically
C5, C6 multilayer ceramic chip capacitor 10 pF [1] solder vertically
C7, C8, C9, C10 electrolytic capacitor 220 nF Vishay VJ1206Y224KXB
C13, C14 multilayer ceramic chip capacitor 4.7 μF; 50 V [2]
C15 multilayer ceramic chip capacitor 1.5 pF [1] solder vertically
C17, C18 electrolytic capacitor 220 μF; 63 V ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent BLF6G10LS-200RN -
R1, R2, R3 SMD resistor 9.1 Ω; 0.1 W
