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Partno	Mfg	Dc	Qty	Available	Descript
BLF542	PHILIPS	N/a	102	avai	UHF power MOS transistor
BLF542	PHL	N/a	103	avai	UHF power MOS transistor

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BLF542
UHF power MOS transistor

Philips Semiconductors Product speciﬁcation
UHF power MOS transistor BLF542
FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the UHF frequency
range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
QUICK REFERENCE DATA
RF performance at Tmb = 25°C in a common source test circuit.
Philips Semiconductors Product speciﬁcation
UHF power MOS transistor BLF542
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Philips Semiconductors Product speciﬁcation
UHF power MOS transistor BLF542
CHARACTERISTICS
Tj = 25°C unless otherwise speciﬁed.
Philips Semiconductors Product speciﬁcation
UHF power MOS transistor BLF542
Philips Semiconductors Product speciﬁcation
UHF power MOS transistor BLF542
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C unless otherwise speciﬁed.
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF542 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions: VDS= 28 V;
f = 500 MHz at rated output power.

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