BGU7045 Fast Delivery |IC PHOENIX CO.,LIMITED

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BGU7045
1 GHz wideband low-noise amplifier with bypass
1. Product profile
1.1 General description
The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode. It is designed
specifically for high linearity, low-noise applications over a frequency range of 40 MHz to GHz. It is especially suited for Set-Top Box applications.
The LNA is housed in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits Voltage supply of 3.3 V Internally biased Programmable between Gp=14 dB and bypass Flat gain between 40 MHz and 1 GHz Noise figure of 2.8 dB High linearity with an IP3O of 29 dBm 75  input and output impedance Power-down during bypass mode Bypass mode current consumption < 5 mA ESD protection > 2 kV Human Body Model (HBM) and >1.5 kV Charged Device Model
(CDM) on all pins
1.3 ApplicationsT errestrial and cable Set-Top Boxes (STB) Silicon and “Can” tuners Personal Video Recorders (PVR) and Digital Video Recorders (DVR) Home networking and in-house signal distribution
BGU7045
1 GHz wideband low-noise amplifier with bypass
Rev. 1 — 3 February 2012 Product data sheet
NXP Semiconductors BGU7045
1 GHz wideband low-noise amplifier with bypass
1.4 Quick reference data
[1] Mode depends on setting of VCTRL; see Table8.
[2] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2f2 f1, where =f11 MHz. Input power Pi= 10 dBm.
2. Pinning information
3. Ordering information
4. Marking
Table 1. Quick reference data
Tamb= 25 C; typical values at VCC = 3.3 V; ZS =ZL =75 ; Rbias= 18 ; 40 MHz  f1  1000 MHz.
VCC supply voltage RF input AC coupled 3.1 3.3 3.5 V
ICC(tot) total supply current Gp = 14 dB mode [1] 30 34 38 mA
bypass mode [1] -3 - mA
Tamb ambient temperature 40- +85 C noise figure Gp = 14 dB mode [1] -2.8- dB
bypass mode [1] -2.5- dB
PL(1dB) output power at 1 dB gain
compression
Gp = 14 dB mode;
1GHz
[1] -13 - dBm
IP3O output third-order intercept point Gp = 14 dB mode [1][2] -29 - dBm
Table 2. Pinning
Table 3. Ordering information
BGU7045 - plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
BGU7045 LK* * = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
NXP Semiconductors BGU7045
1 GHz wideband low-noise amplifier with bypass
5. Limiting values
[1] VCTRL must not exceed VCC; ICTRL must be limited to 5 mA (maximum).
[2] Tsp is the temperature at the solder point of the ground lead.
Remark: VCTRL must not exceed VCC; ICTRL must be limited to a maximum of 5 mA.
6. Thermal characteristics
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCC supply voltage RF input AC coupled 0.6 3.5 V
VCTRL voltage on CTRL pin [1] 0VCC V
ICC(tot) total supply current - 60 mA
Ptot total power dissipation Tsp  100 C [2]- 250 mW input power single tone - 20 dBm
Tstg storage temperature 65 +150 C junction temperature - 150 C
Tamb ambient temperature 40 +85 C
VESD electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E kV
Charged Device Model (CDM);
according to JEDEC standard
22-C101B
1.5 - kV
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point 240 K/W
Table 7. CharacteristicsTamb= 25 C; typical values at VCC = 3.3 V; ZS =ZL =75 ; Rbias= 18 ; 40 MHz  f1  1000 MHz.
VCC supply voltage RF input AC coupled 3.1 3.3 3.5 V
ICC(tot) total supply current Gp = 14 dB mode [1] 30 34 38 mA
bypass mode [1] -3 -mA
s212 insertion power gain Gp = 14 dB mode [1] -14 -dB
bypass mode [1]- 2- dB
SLsl slope straight line Gp = 14 dB mode - 1- dB flatness of frequency response Gp = 14 dB mode - 0.2 - dB noise figure Gp = 14 dB mode [1] -2.8 -dB
bypass mode [1] -2.5 -dB
NXP Semiconductors BGU7045
1 GHz wideband low-noise amplifier with bypass
[1] Mode depends on setting of VCTRL; see Table8.
[2] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2f2 f1, where =f11 MHz. Input power Pi= 10 dBm.
Remark: VCTRL must not exceed VCC; ICTRL must be limited to a maximum of 5 mA.
RLin input return loss Gp = 14 dB mode [1] -20 -dB
bypass mode [1] -9 -dB
RLout output return loss Gp = 14 dB mode [1] -12 -dB
bypass mode [1] -10 -dB
PL(1dB) output power at 1 dB gain
compression
Gp = 14 dB mode;
1GHz
[1] -13 -dBm
IP3O output third-order intercept point Gp = 14 dB mode [1][2] -29 -dBm
bypass mode [1][2] -27 -dBm
Table 8. Gain selection (pin CTRL) 10 C  Tamb  +70 C; recommended power-up condition: VCTRL = logic 0 or < 0.7 V.
 0.7 bypass
 1.5 Gp = 14 dB
Table 7. Characteristics …continued
Tamb= 25 C; typical values at VCC = 3.3 V; ZS =ZL =75 ; Rbias= 18 ; 40 MHz  f1  1000 MHz.
NXP Semiconductors BGU7045
1 GHz wideband low-noise amplifier with bypass
8. Application information
Other applications are possible. Please contact your local sales representative for more
information. Application notes are available on the NXP website.
8.1 Application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
8.2 Application circuit board layout
NXP Semiconductors BGU7045
1 GHz wideband low-noise amplifier with bypass
[1] L1 and R1 must have a power rating of 0.1 W or higher.
Table 9. List of components
See Figure 1 and Figure2.
C1, C2 capacitor 10 nF DC blocking
C3, C4 capacitor 10 nF decoupling capacitor 10 F decoupling chip ferrite bead 1.5 k [1] Murata BLM18HE152SN1DF RF choke resistor 18  [1] Rbias bias setting resistor 1.8 k current limiting
X1, X2 connector 75  F-connector, edge mount PCB
reflow type, Bomar 861V509ER6
input/output

Partno	Mfg	Dc	Qty	Available	Descript
BGU7045	NXP	N/a	50	avai	1 GHz wideband low-noise amplifier with bypass