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BGM1012
BGM1012; MMIC wideband amplifier
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
FEATURES Internally matched to 50Ω Very wide frequency range (4 Ghz at 3 dB bandwidth) Very flat 20 dB gain (DCto 2.9 Ghz at 1 dB flatness) 10 dBm saturated output power at 1 GHz High linearity (18 dBm IP3(out) at 1 GHz) Low current (14.6 mA) Unconditionally stable.
APPLICATIONS LNB IF amplifiers Cable systems ISM General purpose.
DESCRIPTIONSilicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuitina 6-pin
SOT363 SMD plastic package.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
CHARACTERISTICS =3V; IS= 14.6 mA; Tj =25 °C; unless otherwise specified.
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
APPLICATION INFORMATIONFigure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched toΩ, and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz. However, when the deviceis
operated below 100 MHz, the capacitor value should be
increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increasedto 220 nH.At frequencies above1 GHza much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
suchas the TDK MLG 1608 (0603),ora wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths mustbe usedfor the ground planesof the
ground pins GND1 andGND2, and these paths mustbeas
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristicsof the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5). Fig.6 the MMICis usedasa driverto the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
