BGB540 ,Silicon MMICs
BGC405 ,Active Biased RF Transistor (RF MMIC)BGC405Self-Biased BFP40556
BGB540
Silicon MMICs
BGB540
Active Biased RF Transistor
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BGB540
Data sheet
Revision History:2002-09-11 Previous Version:2001-08-16
Data sheet42002-09-11
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Active Biased RF Transistor BGB540
FeaturesGms= 18dB at 1.8GHzSmall SOT343 packageCurrent easy adjustable by an external resistorOpen collector outputTypical supply voltage: 1.4-4.3V
SIEGET®-45 technology
ApplicationsFor high gain low noise amplifiersIdeal for wideband applications, cellular phones,
cordless telephones, SAT-TV and high frequency
oscillators
DescriptionSIEGET®-45 NPN Transistor with integrated
biasing for high gain low noise figure
applications. IC can be controlled using IBias
according to IC=10*IBias .
Data sheet52002-09-11
Maximum RatingsNotes:
For detailed symbol description refer to figure 1.
1) TS is measured on the emitter lead at the soldering point to the PCB
Fig. 1: Symbol definition
Data sheet6 2002-09-11
B,1E,2
IBiasICRF In
RBias
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2)Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter
