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BSO094N03S ,Low Voltage MOSFETscharacteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DGate threshold v ..
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BGA612
Silicon MMICs
thinking.BGA612
Silicon Germaniumoadband MMIC Amplifier
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGA612
Data sheet
Revision History:2003-11-04 Previous Version:2002-05-27
Data sheet42003-11-04
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Silicon Germanium
Broadband MMIC Amplifier
BGA612VPS05605
FeaturesCascadable 50Ω-gain block3 dB-bandwidth: DC to 2.8 GHz with
17.0 dB typical gain at 1.0 GHzCompression point P-1dB = 7 dBm at 2.0 GHzNoise figure F50Ω = 2.35 dB at 2.0 GHzAbsolute stable
70 GHz fT - Silicon Germanium technology
ApplicationsDriver amplifier for GSM/PCS/CDMA/UMTSBroadband amplifier for SAT-TV & LNBsBroadband amplifier for CATV
DescriptionThe BGA612 is a broadband matched,
general purpose MMIC amplifier in a
Darlington configuration. It is optimized
for a typical supply current of 20mA.
The BGA612 is based on Infineon
Technologies’ B7HF Silicon Germanium
technology.
Data sheet52003-11-04
Maximum RatingsNotes:
All Voltages refer to GND-Node Valid for ZS=ZL=50Ω, VCC=5V, RBias=135Ω
2) TS is measured on the ground lead at the soldering point
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)VCC=5V, RBias=135Ω, Frequency=2GHz, unless otherwise specified
Data sheet6 2003-11-04
S-Parameter VCC=5V, RBias=135Ω (see Electrical Characteristics for conditions)
Fig.1: Test Circuit for Electrical Characteristics and S-Parameters
