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BGA2716
MMIC wideband amplifier
1. Product profile
1.1 General descriptionSilicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features and benefits Internally matched to 50 Wide frequency range (3.2 GHz at 3 dB bandwidth) Flat 23 dB gain (1 dB up to 2.7 GHz) 9 dBm output power at 1 dB compression point Good linearity for low current (IP3out = 22 dBm) Low second harmonic; 38 dBc at PL = 5 dBm Unconditionally stable (K 1.2).
1.3 Applications LNB IF amplifiers Cable systems ISM General purpose.
1.4 Quick reference data
BGA2716
MMIC wideband amplifier
Rev. 3 — 8 September 2011 Product data sheet
Table 1. Quick reference data DC supply voltage - 5 6 V supply current - 15.9 - mA
s212 insertion power gain f = 1 GHz - 22.9 - dB noise figure f = 1 GHz - 5.3 - dB
PL(sat) saturated load power f = 1 GHz - 11.6 - dBm
NXP Semiconductors BGA2716
MMIC wideband amplifier
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Table 3. Ordering informationBGA2716 - plastic surface mounted package; 6 leads SOT363
Table 4. MarkingBGA2716 B7-
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). DC supply voltage RF input AC
coupled V supply current - 30 mA
Ptot total power dissipation Tsp 90 C- 200 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C maximum drive power - 10 dBm
NXP Semiconductors BGA2716
MMIC wideband amplifier
6. Thermal characteristics
7. Characteristics
Table 6. Thermal characteristicsRth(j-sp) thermal resistance from junction
to solder point
Ptot = 200 mW;
Tsp 90 C
300 K/W
Table 7. Characteristics =5 V; IS =15.9 mA; Tj =25 C; measured on demo board; unless otherwise specified. supply current 13 15.9 21 mA
s212 insertion power
gain
f = 100 MHz 21 22.1 23 dB
f = 1 GHz 22 22.9 24 dB
f = 1.8 GHz 22 23.1 25 dB
f = 2.2 GHz 21 22.8 24 dB
f = 2.6 GHz 20 22.1 24 dB
f = 3 GHz 19 20.8 22 dB
s112 input return
losses
f = 1 GHz 15 17 - dB
f = 2.2 GHz 10 12 - dB
s222 output return
losses
f = 1 GHz 10 12 - dB
f = 2.2 GHz 9 11 - dB
s122 isolation f = 1.6 GHz 30 31 - dB
f = 2.2 GHz 33 35 - dB noise figure f = 1 GHz - 5.3 5.4 dB
f = 2.2 GHz - 5.5 5.6 dB bandwidth at s212 3 dB below flat
gain at 1 GHz
33.2 - GHz stability factor f = 1 GHz - 1.4 -
f = 2.2 GHz - 1.9 -
PL(sat) saturated load
power
f = 1 GHz 10 11.6 - dBm
f = 2.2 GHz 6 7.5 - dBm
PL(1dB) load power at 1 dB gain compression;
f = 1 GHz
88.9 - dBm
at 1 dB gain compression;
f=2.2GHz
56.1 - dBm
IM2 second order
intermodulation
product
at PL = 5 dBm; =1GHz 38 - dBc
IP3in input, third
order intercept
point
f = 1 GHz 2 0.7 - dBm
f = 2.2 GHz 8 6.9 - dBm
IP3out output, third
order intercept
point
f = 1 GHz 21 22.2 - dBm
f = 2.2 GHz 15 15.9 - dBm
NXP Semiconductors BGA2716
MMIC wideband amplifier
8. Application informationFigure 1 shows a typical application circuit for the BGA2716 MMIC. The device is
internally matched to 50 , and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this
value should be increased. At frequencies above 1 GHz, a lower value can be used to
tune the output return loss. For optimal results, a good quality chip inductor or a
wire-wound SMD type should be chosen.
Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as
close as possible to the MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
Figure 2 shows the PCB layout, used for the standard demonstration board.
NXP Semiconductors BGA2716
MMIC wideband amplifier
8.1 Application examplesThe excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifier such as LNBs (see Figure 3).
NXP Semiconductors BGA2716
MMIC wideband amplifierAs second amplifier after an LNA, the MMIC offers an easy matching, low noise solution
(see Figure 4).
As driver amplifier in the TX path, the good linear performance and matched input/output
offer quick design solutions (see Figure 5).
NXP Semiconductors BGA2716
MMIC wideband amplifier
