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BGA2714
MMIC wideband amplifier
Product profile1.1 General descriptionSilicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features Internally matched to 50Ω Wide frequency range (2.7 GHz at 3 dB gain bandwidth) Flat 21 dB gain (± 1 dB from DC up to 2500 MHz) Very low current (4.6 mA) at low supply voltage of 3 V Very good reverse isolation (> 50 dB up to 2 GHz) Good linearity with low second order and third order products Low noise (NF = 2.2 dB at 1 GHz) Unconditionally stable (K > 5)
1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between and 2.7 GHz
BGA2714
MMIC wideband amplifier
Rev. 01 — 24 May 2007 Product data sheet
Table 1. Typical performanceTamb = 25 °C; measured on demo board; typical values.
250 3.0 4.58 20.7 2.4 −7.8 −2.4 4.3
950 3.0 4.58 20.4 2.2 −7.9 −3.4 2.1
2150 3.0 4.58 20.8 3.0 −9.0 −4.7 0.0
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BGA2714
MMIC wideband amplifier Pinning information Ordering information Marking Limiting values
Table 2. Pinning1VSUP
2, 5 GND2 RF_OUT GND1 RF_IN
sym052
Table 3. Ordering informationBGA2714 - plastic surface-mounted package; 6 leads SOT363
Table 4. MarkingBGA2714 BA-
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VSUP supply voltage RF input AC coupled - 4 V
ISUP supply current - 10 mA
Ptot total power dissipation Tsp = 90°C - 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Pdrive drive power - −20 dBm
NXP Semiconductors BGA2714
MMIC wideband amplifier Thermal characteristics Characteristics
Table 6. Thermal characteristicsRth(j-sp) thermal resistance from junctionto
solder point
Ptot= 200 mW; Tsp =90°C 300 K/W
Table 7. CharacteristicsVSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.
ISUP supply current 3.7 4.58 5.7 mA power gain f = 100 MHz 20 20.8 21 dB
f = 250 MHz 20 20.7 21 dB
f = 950 MHz 20 20.4 21 dB
f = 2150 MHz 20 20.8 22 dB
f = 2500 MHz 19 19.5 21 dB
f = 3000 MHz 16 16.8 18 dB
RLin input return loss f = 250 MHz 11 13.9 - dB
f = 950 MHz 7 8.9 - dB
f = 2150 MHz 12 15.9 - dB
RLout output return loss f = 250 MHz 10 10.6 - dB
f = 950 MHz 10 10.8 - dB
f = 2150 MHz 8 9.8 - dB
ISL isolation f = 250 MHz 55 58 - dB
f = 950 MHz 55 59 - dB
f = 2150 MHz 45 49 - dB noise figure f = 250 MHz - 2.4 2.5 dB
f = 950 MHz - 2.2 2.3 dB
f = 2150 MHz - 3.0 3.2 dB
B−3dB −3 dB bandwidth 3 dB below gain
at 1 GHz 2.7 - GHz Rollet stability factor f = 250 MHz 25 30 -
f = 950 MHz 35 47 -
f = 2150 MHz 7 10 -
PL(sat) saturated output power f = 250 MHz −3 −2.4 - dBm
f = 950 MHz −4 −3.4 - dBm
f = 2150 MHz −6 −4.7 - dBm
PL(1dB) output power at 1 dB gain compression f = 250 MHz −8.5 −7.8 - dBm
f = 950 MHz −8.7 −7.9 - dBm
f = 2150 MHz −10 −9 - dBm
NXP Semiconductors BGA2714
MMIC wideband amplifier Application informationFigure 1 shows a typical application circuit for the BGA2714 MMIC. The device is
internally matchedto50Ω, and therefore does not need any external matching. The value the input and output DC blocking capacitors C2 and C3 should notbe more than 100pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
IP3I input third-order intercept point f = 250 MHz −17.4 −16.4- dBm
f = 950 MHz −19.1 −18.3- dBm
f = 2150 MHz −21.8 −20.8- dBm
IP3O output third-order intercept point f = 250 MHz 3.3 4.3 - dBm
f = 950 MHz 1.3 2.1 - dBm
f = 2150 MHz −1.0 0 - dBm
PL(2H) second harmonic output power f1H= 250 MHz;
f2H= 500 MHz;
Pdrive= −40 dBm
−62 −64 - dBm
f1H= 950 MHz;
f2H= 1900 MHz;
Pdrive= −40 dBm
−58 −60 - dBm
ΔIM2 second-order intermodulation distance f1= 250 MHz;= 251 MHz;
Pdrive= −40 dBm
−36 −38 - dBc= 950 MHz;= 951 MHz;
Pdrive= −40 dBm
−31 −33 - dBc
Table 7. Characteristics …continuedVSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.
NXP Semiconductors BGA2714
MMIC wideband amplifier
8.1 Application examples
8.2 Graphs
NXP Semiconductors BGA2714
MMIC wideband amplifier
NXP Semiconductors BGA2714
MMIC wideband amplifier
NXP Semiconductors BGA2714
MMIC wideband amplifier
