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BGA2003NXPN/a64572avaiSilicon MMIC amplifier


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BGA2003
Silicon MMIC amplifier

NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
FEATURES
Low current Very high power gain Low noise figure Integrated temperature compensated biasing Control pin for adjustment bias current Supply and RF output pin combined.
APPLICATIONS
RF front end Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.) Low noise amplifiers Satellite television tuners (SATV) High frequency oscillators.
DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS

RF input AC coupled; Tj =25 °C; unless otherwise specified.
Note
See application note RNR-T45-99-B-0514.
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
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