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BGA2001NXP/PHILIPSN/a3000avaiSilicon MMIC amplifier
BGA2001NXPN/a19452avaiSilicon MMIC amplifier


BGA2001 ,Silicon MMIC amplifierapplications in a plastic, 4-pin dual-emitter SOT343R package.QUICK REFERENCE DATASYMBOL PARAMETER ..
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BGA2001
Silicon MMIC amplifier

NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2001
FEATURES
Low current, low voltage Very high power gain Low noise figure Integrated temperature compensated biasing Supply and RF output pin combined.
APPLICATIONS
RF front end Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Low noise amplifiers Satellite television tuners (SATV) High frequency oscillators.
DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2001
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS

RF input AC coupled; Tj =25 C; unless otherwise specified.
Note
See application note: RNR-T45-99-B-0513.
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2001
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2001
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2001
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