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BG3130-BG3130R
RF-MOSFET
BG3130...
DUAL N-Channel MOSFET Tetrode• Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
BG3130BG3130R
ESD: Electrostatic discharge sensitive device, observe handling precaution!180° rotated tape loading orientation available
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BG3130...
Electrical Characteristics
DC Characteristics
BG3130...
Electrical Characteristics
AC Characteristics VDS = 5V, VG2S = 4V, (ID = 14 mA) (verified by random sampling)
BG3130...
Total power dissipation Ptot = ƒ(TS)
amp. A = amp. B
50
100
150
200
300
tot
Drain current ID = ƒ(IG1)G2S = 4V
amp. A = amp. B
10
15
20
30
Output characteristics ID = ƒ(VDS)
amp. A = amp. B
10
12
14
16
18
22
Gate 1 current IG1 = ƒ(VG1S)DS = 5V, VG2S = Parameter
amp. A = amp. B
25
50
75
100
125
150
175
225
G1S
BG3130...
Gate 1 forward transconductancefs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A = amp. B
10
15
20
25
30
40
Drain current ID = ƒ(VG1S)DS = 5V, VG2S = Parameter
amp. A = amp. B
12
16
20
24
32
Drain current ID = ƒ(VGG) amp.A=amp.BDS = 5V, VG2S = 4V, RG1 = 120kΩ
(connected to VGG, VGG=gate1 supply voltage)
10
11
13
Drain current ID = ƒ(VGG)G2S = 4V, RG1 = Parameter in kΩ
amp. A = amp. B
10
12
14
16
18
22
BG3130...
Crossmodulation Vunw = (AGC)DS = 5 V, Rg1 = 68 kΩ
80
90
100
120
unw
Cossmodulation test circuit
