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Partno	Mfg	Dc	Qty	Available	Descript
BFU690F	NXP	N/a	150	avai	NPN wideband silicon RF transistor

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BFU690F
NPN wideband silicon RF transistor
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits Low noise high linearity microwave transistor High output third-order intercept point 34 dBm at 1.8 GHz 40 GHz fT silicon technology
1.3 Applications Ka band oscillators DRO’s C-band high output buffer amplifier ZigBee LTE, cellular, UMTS
1.4 Quick reference data
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K> 1. If K< 1 then Gp(max)= Maximum Stable Gain (MSG).
BFU690F
NPN wideband silicon RF transistor
Rev. 2 — 14 March 2014 Product data sheet
Table 1. Quick reference data
NXP Semiconductors BFU690F
NPN wideband silicon RF transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Tsp is the temperature at the solder point of the emitter lead.
Table 2. Discrete pinning
Table 3. Ordering information
Table 4. Marking
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors BFU690F
NPN wideband silicon RF transistor
6. Thermal characteristics
[1] Determined by simulation.
Table 6. Thermal characteristics
NXP Semiconductors BFU690F
NPN wideband silicon RF transistor
7. Characteristics
[1] Gp(max) is the maximum power gain, if K> 1. If K< 1 then Gp(max) =MSG.
Table 7. Characteristics =25 C unless otherwise specified
NXP Semiconductors BFU690F
NPN wideband silicon RF transistor
NXP Semiconductors BFU690F
NPN wideband silicon RF transistor

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