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Partno	Mfg	Dc	Qty	Available	Descript
BFT25A	NXP/PHILIPS	N/a	3000	avai	NPN 5 GHz wideband transistor
BFT25A	NXP	N/a	1382	avai	NPN 5 GHz wideband transistor

BFT25A ,NPN 5 GHz wideband transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BFT25A
NPN 5 GHz wideband transistor
1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to2GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features and benefits Low current consumption (100 A to 1 mA) Low noise figure Gold metallization ensures excellent reliability.
1.3 Quick reference data
[1] Ts is the temperature at the soldering point of the collector tab.
BFT25A
NPN 5 GHz wideband transistor
Rev. 5 — 12 September 2011 Product data sheet
Table 1. Quick reference data
VCBO collector-base
voltage
open emitter - - 8 V
VCEO collector-emitter voltage open base - - 5 V DC collector
current 6.5 mA
Ptot total power
dissipation
up to Ts = 165 C [1] -- 32 mW
hFE DC current gain IC = 0.5 mA; VCE = 1V 50 80 200 transition frequency IC = 1 mA; VCE = 1V; Tamb =25 C;= 500 MHz
3.5 5 - GHz
GUM maximum
unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
Tamb = 25 C;f= 1 GHz
-15 -dB noise figure = opt; IC= 0.5 mA;
VCE = 1 V;
Tamb =25 C; f = 1 GHz
-1.8 -dB= opt; IC= 1 mA; VCE = 1 V;
Tamb =25 C; f = 1 GHz -dB
NXP Semiconductors BFT25A
NPN 5 GHz wideband transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
5. Limiting values
[1] Ts is the temperature at the soldering point of the collector tab.
Table 2. Discrete pinning
Table 3. Ordering information
BFT25A - plastic surface mounted package; 3 leads SOT23
Table 4. Marking
BFT25A 34*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 8 V
VCEO collector-emitter voltage open base - 5 V
VEBO emitter-base voltage open collector - 2 V DC collector current - 6.5 mA
Ptot total power dissipation up to Ts =165C [1] -32 mW
Tstg storage temperature 65 +150 C junction temperature - 175 C
NXP Semiconductors BFT25A
NPN 5 GHz wideband transistor
6. Thermal characteristics
[1] Ts is the temperature at the soldering point of the collector tab.
7. Characteristics
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
Table 6. Thermal characteristics
Rth(j-s) from junction to soldering point [1] 260 K/W
Table 7. Characteristics
Tj = 25 C unless otherwise specified.
ICBO collector cut-off
current
IE = 0 A; VCB = 5V - - 50 nA
hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 transition
frequency
IC = 1 mA; VCE = 1 V;
Tamb = 25 C; = 500 MHz
3.5 5 - GHz
Cre feedback
capacitance =ic =0A; VCB =1 V;
f= 1 MHz 0.3 0.45 pF
GUM maximum
unilateral power
gain
IC = 0.5 mA; VCE = 1V;
Tamb = 25 C; f = 1 GHz
[1] -15 -dB noise figure = opt; IC= 0.5 mA;
VCE = 1 V;
Tamb =25 C; f = 1 GHz
-1.8 -dB= opt; IC= 1 mA;
VCE = 1 V;
Tamb =25 C; f = 1 GHz -dB
NXP Semiconductors BFT25A
NPN 5 GHz wideband transistor
Figure 5, 6, 7 and 8, GUM= maximum unilateral power gain; MSG = maximum stable gain.
NXP Semiconductors BFT25A
NPN 5 GHz wideband transistor
NXP Semiconductors BFT25A
NPN 5 GHz wideband transistor
NXP Semiconductors BFT25A
NPN 5 GHz wideband transistor
Table 8. Noise parameters
500 1 1 1.9 0.79 4 2.5
Table 9. Noise parameters
1000 11 20.74 82.6

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