BFS483 ,RF-BipolarBFS483NPN Silicon RF Transistor45
BFS483
RF-Bipolar
BFS483
NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier
at collector currents from 2 mA to 28 mA fT = 8 GHz
F = 1.2 dB at 900 MHz Two (galvanic) internal isolated
Transistors in one package
EHA0719621B2E1B1
TR1
TR2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFS483
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFS483
AC characteristics (verified by random sampling)Gms = |S21 / S12|Gma = |S21 / S12| (k-(k2-1)1/2)
BFS483
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
350
400
500
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFS483
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
Transition frequency fT = f (IC) CE = Parameter
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
16
20
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
14
BFS483
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) CE = Parameter, f = 900MHz
10
12
14
16
18
20
22
24
26
30
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
10
12
14
16
20
Power Gain |S21|2= f(f) CE = Parameter
10
15
20
30
Power Gain Gma, Gms = f(f) CE = Parameter
10
12
14
16
18
20
22
24
26
28
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