BFS469L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS483 ,RF-BipolarBFS483NPN Silicon RF Transistor45
BFS469L6E6327
RF-Bipolar
BFS469L6
NPN Silicon RF TWIN TransistorPreliminary data
• Low voltage/ low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.5 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR949L3)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
BFS469L6
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics (verified by random sampling)
BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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