BFS466L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BFS469L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS483 ,RF-BipolarBFS483NPN Silicon RF Transistor45
BFS466L6E6327
RF-Bipolar
BFS466L6
NPN Silicon RF TWIN TransistorPreliminary data
• Low voltage/ low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.0 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR360L3)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
BFS466L6
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics (verified by random sampling)
BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2)
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