BFS460L6E6327 ,RF-Bipolarapplications26• Ideal for VCO modules and low noise amplifiers• Low noise figure: 1.1 dB at 1.8 GHz ..
BFS466L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BFS469L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS481 ,NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
BFS483 ,RF-BipolarBFS483NPN Silicon RF Transistor45
BFS460L6E6327
RF-Bipolar
BFS460L6
NPN Silicon RF TWIN TransistorPreliminary data
• High fT of 22 GHz
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Excellent ESD performance (>1500V HBM)
• Built in 2 transistors (TR1, TR2: die as BFR460L3)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceBFS460L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BFS460L6
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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