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BFS25APHILIPSN/a3000avaiNPN 5 GHz wideband transistor
BFS25ANXP/PHILIPSN/a3000avaiNPN 5 GHz wideband transistor
BFS25ANXPN/a24000avaiNPN 5 GHz wideband transistor


BFS25A ,NPN 5 GHz wideband transistorFEATURES PINNING• Low current consumptionPIN DESCRIPTION• Low noise figureCode: N6handbook, 2 colum ..
BFS25A ,NPN 5 GHz wideband transistor
BFS25A ,NPN 5 GHz wideband transistor
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BFS25A
NPN 5 GHz wideband transistor

Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
FEATURES
Low current consumption Low noise figure Gold metallization ensures
excellent reliability SOT323 envelope.
DESCRIPTION

NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
PINNING
QUICK REFERENCE DATA
LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
Note
Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
THERMAL RESISTANCE
Note
Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
=25 °C, unless otherwise specified.
Note
GUM is the maximum unilateral power gain, assuming S12 is zero andUM 10 log S2111–  1S22– -------------------------------------------------------------- dB.=
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG= maximum stable gain; Gmax= maximum available
gain.
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
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