BFS17W ,NPN Silicon RF TransistorBFS17WNPN Silicon RF Transistor3
BFS17W
NPN Silicon RF Transistor
BFS17W
NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFS17W
Electrical Characteristics a TA = 25°C, unless otherwise specified.
DC characteristics
BFS17W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics
BFS17W
Total power dissipation Ptot = f(TS)
40
80
120
160
200
240
320
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10 10
tot
ax
/ P
totDC
BFS17W
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.3
Transition frequency fT = f (IC) CE = Parameter
0.0
0.5
1.0
1.5
2.0
3.0
:
www.ic-phoenix.com
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