BFR92W ,RF-BipolarcharacteristicsV 15 - - VCollector-emitter breakdown voltage (BR)CEOI = 1 mA, I = 0 C BI - - 10 µAC ..
BFR93 ,NPN 5 GHz wideband transistor
BFR93 ,NPN 5 GHz wideband transistor
BFR93 ,NPN 5 GHz wideband transistor
BFR93A ,NPN Silicon RF Transistor for low noi...Rev. 3, 20-Jan-99 1 (9)BFR93A/BFR93AR/BFR93AWVishay SemiconductorsMaximum Thermal ResistanceT = 25
BFR92W
RF-Bipolar
BFR92W
NPN Silicon RF Transistor For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA Complementary type: BFT 92W (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR92W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFR92W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k2-1)1/2)
BFR92W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR92W
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
BFR92W
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.3
0.4
0.5
0.6
0.8
Transition frequency fT = f (IC) CE = Parameter
0.5
1.5
2.5
3.5
4.5
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
-6
-4
-2
10
12
14
18
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
-6
-4
-2
12
