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Partno	Mfg	Dc	Qty	Available	Descript
BFR540	NXP/PHILIPS	N/a	3000	avai	NPN 9 GHz wideband transistor

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BFR540
NPN 9 GHz wideband transistor
1. Product profile
1.1 General description
The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
1.3 Applications RF front end wideband applications in the GHz range Analog and digital cellular telephones Cordless telephones (CT1, CT2, DECT, etc.) Radar detectors Satellite TV tuners (SATV) MATV/CATV amplifiers Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
BFR540
NPN 9 GHz wideband transistor
Rev. 6 — 13 September 2011 Product data sheet
Table 1. Quick reference data
VCBO collector-base voltage open emitter - - 20 V
VCES collector-emitter
voltage
RBE =0 --15 V collector current (DC) - - 120 mA
Ptot total power dissipation Tsp70C [1]- - 500 mW
hFE DC current gain IC =40 mA; VCE=8V 100 120 250
Cre feedback capacitance IC =ic =0A; VCB =8V;
f=1MHz
-0.6 - pF transition frequency IC =40 mA; VCE =8V;
f=1GHz - GHz
GUM maximum unilateral
power gain =40 mA; VCE =8V;
Tamb =25C
f=900MHz - 14 - dB
f=2GHz - 7 - dB
NXP Semiconductors BFR540
NPN 9 GHz wideband transistor
[1] Tsp is the temperature at the soldering point of the collector tab.
2. Pinning information
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
s212 insertion power gain IC =40 mA; VCE =8V;
Tamb =25 C;
f=900MHz 13 - dB noise figure s= opt; VCE =8V;
Tamb =25C =10 mA;
f=900MHz
-1.3 1.8 dB =40 mA;
f=900MHz
-1.9 2.4 dB =10 mA;
f=2GHz
-2.1 - dB
Table 1. Quick reference data …continued
Table 2. Pinning
Table 3. Ordering information
BFR540 - plastic surface mounted package; 3 leads SOT23
Table 4. Marking
BFR540 33*
NXP Semiconductors BFR540
NPN 9 GHz wideband transistor
5. Limiting values
[1] Tsp is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
[1] Tsp is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 20 V
VCES collector-emitter voltage RBE =0  -15 V
VEBO emitter-base voltage open collector - 2.5 V collector current (DC) - 120 mA
Ptot total power dissipation Tsp70C [1] -500 mW
Tstg storage temperature 65 +150 C junction temperature - 175 C
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction to soldering point [1] 260 K/W
Table 7. Characteristics =25 C unless otherwise specified.
ICBO collector cut-off
current =0A; VCB =8V - - 50 nA
hFE DC current gain IC =40 mA; VCE=8V 100 120 250 emitter
capacitance =ic =0A; VEB =0.5V;
f=1MHz - pF collector
capacitance =ie =0A; VCB =8V;
f=1MHz
-0.9 - pF
Cre feedback
capacitance =0 A; VCB =8V;
f=1MHz
-0.6 - pF transition
frequency =40 mA; VCE =8V;
f=1GHz - GHz
GUM maximum
unilateral power
gain =40 mA; VCE =8V;
Tamb =25C
[1]
f=900MHz - 14 - dB
f=2GHz - 7 - dB
s212 insertion power
gain =40 mA; VCE =8V;
Tamb =25 C; f= 900 MHz 13 - dB
NXP Semiconductors BFR540
NPN 9 GHz wideband transistor
[1] GUM is the maximum unilateral power gain, assuming s12 is zero and
[2] IC= 40 mA; VCE =8 V;RL =50 ; Tamb =25 C; f= 900 MHz; fp= 900 MHz; fq= 902 MHz.
Measured at f(2pq)= 898 MHz and f(2qp) =904 MHz.
[3] dim= 60 dB (DIN 45004B); Vp =VO; Vq =VO 6dB; fp= 795.25 MHz; VR =VO 6dB; fq= 803.25 MHz; = 805.25 MHz.
Measured at f(p+qr)= 793.25 MHz. noise figure s= opt; VCE =8V;
Tamb =25C= 10mA; f=900MHz - 1.3 1.8 dB= 40mA; f=900MHz - 1.9 2.4 dB= 10mA; f=2GHz - 2.1 - dB
PL(1dB) output power at dB gain
compression =40 mA; VCE =8V; =50 ; Tamb =25 C;
f=900MHz
-21 - dBm
ITO third order
intercept point
[2] -34 - dBm output voltage IC =40 mA; VCE =8V; =ZS =75 ;
Tamb =25C
[3]- 550 - mV
Table 7. Characteristics …continued =25 C unless otherwise specified.
NXP Semiconductors BFR540
NPN 9 GHz wideband transistor
NXP Semiconductors BFR540
NPN 9 GHz wideband transistor
NXP Semiconductors BFR540
NPN 9 GHz wideband transistor

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