BFR380F ,RF-BipolarBFR380FNPN Silicon RF TransistorPreliminary data
BFR380F
RF-Bipolar
NPN Silicon RF TransistorPreliminary data High current capability and low figure for
wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Characteristics
BFR380F
AC Characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k²-1)1/2)IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHzDC current at no input power
BFR380F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:1 =0.556nH2 =0.675nH3 =0.381nH1 =43fF2 =123fF3 =66fF4 =10fF5 =36fF6 =47fF
EHA07524C
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
BFR380F
Total power dissipation Ptot = (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = (tp)
10 0 10 10
totmax
totDC
Collector-base capacitance Ccb= (VCB)
f = 1MHz
0.2
0.4
0.6
0.8
1.2
1.6
BFR380F
Third order Intercept Point IP3=(IC)
(Output, ZS=ZL=50)CE = parameter, f = 1.8GHz
10
12
14
16
18
20
22
24
26
28
Transition frequency fT= (IC)
f = 1GHzCE = parameter
10
11
12
13
14
16
Power gain Gma, Gms = (IC)
f = 0.9GHzCE = parameter
13
14
15
16
17
18
19
21
Power gain Gma, Gms = (IC)
f = 1.8GHzCE = parameter
10
11
12
13
15
