BFQ67W ,NPN 8 GHz wideband transistorFEATURES PINNING• High power gainPIN DESCRIPTION• Low noise figureCode: V2• High transition frequen ..
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BFQ67W
NPN 8 GHz wideband transistor
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability SOT323 envelope.
DESCRIPTIONNPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to GHz.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
THERMAL RESISTANCE
Note Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS =25 °C, unless otherwise specified.
Note GUM is the maximum unilateral power gain, assuming S12 is zero andUM 10 log2111– 1S22– -------------------------------------------------------------- dB.=
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG= maximum stable gain; Gmax= maximum available
gain.
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
