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BFG31 ,PNP 5 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
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BFG31
PNP 5 GHz wideband transistor

NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
FEATURES
High output voltage capability High gain bandwidth product Good thermal stability Gold metallization ensures
excellent reliability.
DESCRIPTION

PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
PINNING
QUICK REFERENCE DATA
LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
Note
Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
THERMAL CHARACTERISTICS
Note
Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
=25 C unless otherwise specified.
Notes
GUM is the maximum unilateral power gain, assuming S12 is zero and dim= 60 dB; IC= 70 mA; VCE= 10 V; RL =75 ; Tamb =25 C; =Vo at dim= 60 dB; fp= 850.25 MHz; =Vo 6 dB; fq= 858.25 MHz; =Vo 6 dB; fr= 860.25 MHz;
measured at f(p+qr)= 848.25 MHz. dim= 60 dB (DIN 45004B); IC= 70 mA; VCE= 10 V; RL =75 ; Tamb =25 C; =Vo =at dim= 60 dB; fp= 445.25 MHz; =Vo 6 dB; fq= 453.25 MHz; =Vo 6 dB; fr= 455.25 MHz;
measured at f(p+qr)= 443.25 MHz.
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
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