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BF998BVISHAYN/a3000avaiN-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
BF998RAVISHAYN/a3000avaiN-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode


BF998B ,N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion ModeBF998/BF998R/BF998RWVishay TelefunkenN–Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion ModeElec ..
BF998R ,Silicon N-channel dual-gate MOS-FETsRev. 4, 23-Jun-991 (8)BF998/BF998R/BF998RWVishay SemiconductorsMaximum Thermal ResistanceT = 25

BF998B-BF998RA
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
BF998/BF998R/BF998RW
Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600
Document Number 85011
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.
Applications

Input and mixer stages in UHF tuners.
Features
Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance High AGC-range High gain3
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 14
13 56613 654
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
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