BF994S ,N-channel dual-gate MOS-FETapplications such as:43– VHF television tunersg2– Professional communication equipment.g1PINNING1 2 ..
BF994S ,N-channel dual-gate MOS-FET
BF994SA ,N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion ModeFeatures
BF994S
N-channel dual-gate MOS-FET
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF994S
FEATURES Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS VHF applications such as: VHF television tuners Professional communication equipment.
PINNING
DESCRIPTIONDepletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF994S
LIMITING VALUESIn according with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics Device mounted on a ceramic substrate of 8×10× 0.7 mm.
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF994S
STATIC CHARACTERISTICS =25 °C unless otherwise specified.
DYNAMIC CHARACTERISTICSMeasuring conditions (common source): ID=10 mA; VDS =15V; VG2-S =4V; Tamb =25 °C.
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF994S
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
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