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Partno	Mfg	Dc	Qty	Available	Descript
BF966S	VISHAY	N/a	10000	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF966S	PH	N/a	343	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF966S	SIEMENS	N/a	83	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode

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BF970 ,Silicon PNP Planar RF TransistorRev. 3, 20-Jan-99 3 (4)C – Collector Base Capacitance ( pF )CBBF970Vishay SemiconductorsOzone ..
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BF966S
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF966S
Vishay Semiconductors
www.vishay.com
Document Number 85004
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
94 9307 96 12647
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 21
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified

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