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BF961VISHAYN/a10000avaiTrans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50


BF961 ,Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50Rev. 3, 20-Jan-99 3 (7)Y – Forward Transadmittance ( mS ) I – Drain Current ( mA ) P – ..
BF961A ,N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ModeRev. 1.5, 25-Nov-04 1BF961VISHAYVishay SemiconductorsElectrical DC CharacteristicsT = 25 °C, unless ..
BF964S ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 1 (8)BF964SVishay SemiconductorsElectrical DC CharacteristicsT = 25

BF961
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50
BF961
Vishay Semiconductors

www.vishay.com
Document Number 85002
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.
Applications

Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
94 9307 96 12647
BF961 Marking: BF961
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 21
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Maximum Thermal Resistance

Tamb = 25 C, unless otherwise specified
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