BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEApplications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEot TELEFUNKEN ELECTRONIC alt p I manual: tltl0iil30 n .ALGGV r-agrt.sc '. -.1rEiuElFiglkllltlm elec ..
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEFeatures:0 Integrated Gate protection diodes 0 High MD-range. High cross modulation performance q L ..
BF961 ,Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50Rev. 3, 20-Jan-99 3 (7)Y – Forward Transadmittance ( mS ) I – Drain Current ( mA ) P – ..
BF961A ,N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ModeRev. 1.5, 25-Nov-04 1BF961VISHAYVishay SemiconductorsElectrical DC CharacteristicsT = 25 °C, unless ..
BF964S ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 1 (8)BF964SVishay SemiconductorsElectrical DC CharacteristicsT = 25
BF960
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE
DC TELEFUNKEN ELECTRONIC
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N-Channel Dual Gate MOS-Fieldeffect Tetrode . Depletion Mode
Apphtatiortst Input- and Mixerstages especially for UHF TV-tuners up to 900 MHz
Features:
0 Integrated Gate protection diodes
0 High cross modulation perftrrmattets
o Low nolse figure
Dimensions In mm
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Absolutn maximum ratings
Drain Source Voltage
Drain current
Gate 1/Gate 2-Source peak current
Total power dlsslpatlan
Tm, " 60 =
Channel temperature
Storage temperature range
Thermal resistange
"s, -, __ChanE$iEnTbleni
mounted on pc-board one side
Cu M pm thickness 40 x 25 x15 mrna
T12/330.1183 E2
3523 6-06
0 High AGc-range
o Lowteedback capacitance
0 Low Input capacltance
, ' ', 40
6 5 2 2 o a
50 B 4 DIN 41867
JEDEC TO 50
Weight max. 0.1 g
V98 20 V
Its 30 mA
auzsn 10 mA
Pu, 200 mW
Te 150 ''tr
Tm -ti5...+150 °C
Min. Typ. Max.
Hum 450 KM
. ...——-—_m .
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DC chttrttttttrrltrtitttt Min Tht. Max.
Tamb = 25 t, unless otherwise specified
Draln-source breakdown voltage
ID -10pA,- Va1s“'Vazs‘4V mes 20 V
Gate 1-Source breakdown voltage
'has"' 10 mA, Vazs = Vos a 0 i V(Bnmss 6 20 V
Gate 2-Source breakdown voltage
'elaes " 10 mA, Vms " us a 0 f: V(BR)G2SS 5 20 V
Gate 1-Source cutt-off current
ivm " 5 V, V028 = VDS "' O Gs 50 nA
Gate 2- Source cut-off curret .
seas'" 6 V, Vms - h, s'" 0 Iczss 50 nA
Draln current
1tos='1iivrvaess''0t Gs='47 loss 2 20 mA
Gale 1-Source trutt-off voltage
a'" 16 V. Vezs‘4vv Ia=20 pA 'Vomom 2.7 V
Gale 2-Source cutt-off voltage
VDS=15V. vmsov,loaao pA -%siom 2.7 V
M characteristics
VD =15V I =7mA. vmnw. f=1 MHz,
TD " 25 'id,' unless otherwise spetrttied
urnb _
Forward tranttadmitanee _ I M 10 18 mS
Gate 1-lnpu1capacllance Cissy 1.8 pF
Gate 2-lnput capacitance
vats " o, Vazs '3 4 V 015ng 1.0 pF
Feedback capacitance qsso 25 tF
Output capacitance tus 0.8 pF
Power galn
VDS-15VJDu7 mA, VGZS=4V'gG=2 ms,
h'" 5 mS. In 200 MHz G,,, 23 dB
th. a 1 mS. f- 800 MHz tap, 16.5 dB
Nolse tlgure .
W traee6LelU, 'eJ10tusti, F 2.2 3 dB
tfiiuTtr'ITl, =7mA. vmmw, vms =0
" ta, and B grounded
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ihiUi, knd Reeling .
7 ' 9/ 220
7.1. Taping of TO-92 Translators
Standard reeling: Taped on reel, reeled together
with a paper film,
7.1.1. Order Numbers
Add the taping-code to the order number.
Example:
302380 DU 06:2
Order-No. of Type I
Code for T0-92 Transistors
Orientation of translstor on tape "
" 06 " Vlew on flat side of transistor, view on
gummed tape
Additional marklng for speclais 'l
05 s: View on round side of transistor, view on
gummed tape
2) Additional marking '0' :taping withoutpaperlilm
Additionalmarklng "z'':2lgzagfoldedtaptslnspe-
clal box. Marking for
orientation of transistor
not necessary. because
box can be opened on
top or bottom
Example for order Nop, BC 2370 DU E
'd-tttrt-, IIBOI
Ogunlnn luv
tht' mllnlluan
090nm to!
0.3 .ri-tkret --
Flg. 7.2. Dlmenslon of box tor Zigzag folding
Fig. 7.8 Dimensions of tape ln mm
7.1.2 Quantity of devices
1000 devices per reel
2000 devices per folded taps In special box.
Ta, Taped translators In SOT 23 and
SOT 143 case
7.2.1. Designation
a) Standard taping
Designation ls attached wlth codeGSOS in case
of standard taping. Example for normal version
transistors as standard taped: BF 569-GS 08.
Example for R-verslon transistors as standard
taped: BF 569 R-GS 08.
In case of standard taping. the trttnsistororientation
on the tape ls shown in Fig. 7.4 and Fig. 7.5.
Fig, 7.5. Standard taped SOT 143
TELEFUNKEN ELECTRONIC - Int: D EihsrmstvCtstidiii,sli" a EIALGG
Bl Reverse taping
Deslgrtatlottlsattaehtsdwlthcodtst3Stmntrase ur-d? I r 2 o
of reverse taping. Example for nonnal version - - _ . _ t - -
transistors as reverse taped: BF 569-68 07.
Example for R-version transistors as reverse ta-
ping: BF 569 8-63 or,
m case of reverse taping, the lranslsior orientation
on the tape ls shown In Flg. 7.6.
Regarding MOS-FET and MES-FET devices. re-
verse taping is at presen! not available.
Fig, 7.6 Reverse taped SOT 23
----- Do-rIIBn' illutluu 11.6 7
M CJ, I
u ' _l
2391.. ML
wan...
., u..-
. ----l
Fig. " Dimensions of tape in mm
.— ._...-_. .... ..._.«...,. ‘1
M, 7.8 Dimensions of reel in mm
7.2.2 Quantity of devices
3000 devices per reel
A26 3447 A-IZ
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