BF799W ,RF-BipolarcharacteristicsV 20 - - VCollector-emitter breakdown voltage (BR)CEOI = 1 mA, I = 0 C BV 30 - -Coll ..
BF819 ,NPN high-voltage transistor
BF820 ,Surface mount Si-Epitaxial PlanarTransistors
BF820 ,Surface mount Si-Epitaxial PlanarTransistors
BF823 ,Surface mount Si-Epitaxial PlanarTransistors
BF823 ,Surface mount Si-Epitaxial PlanarTransistors
BRL3225T1R0M , Wire-wound Chip Power Inductors (BR series)
BRPG1211C-TR , Bi-color Type (1.6 X 1.5 mm)
BRPG1211F-TR , 1211F Series, Bi-Color Right Angle SMT LED
BRR1A16G , Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A
BRR1A16G , Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A
BRR1A16P , Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A
BF799W
RF-Bipolar
BF799W
NPN Silicon RF Transistor For linear broadband amplifier
application up to 500 MHz SAW filter driver in TV tuners
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BF799W
DC characteristics
AC characteristics
BF799W
Total power dissipation Ptot = f (TS)
20
40
60
80
100
120
140
160
180
200
220
240
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
BF799W
Transition frequency ff = 100MHz0mA50
MHz
12003040Cf
Collector-base capacitance C = f (VCB)
f = 1 MHz
EHT07117V10CBC
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