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BF545ANXP/PHILIPSN/a3000avaiN-channel FET
BF545BNXP/PHILIPSN/a3000avaiN-channel silicon junction field-effect transistors
BF545CNXP/PHILIPSN/a3000avaiN-channel FET


BF545A ,N-channel FETApplications Impedance converters in e.g. electret microphones and infra-red detectors VHF amplif ..
BF545B ,N-channel silicon junction field-effect transistorsLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BF545B ,N-channel silicon junction field-effect transistorsDISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect trans ..
BF545C ,N-channel FETGeneral descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 packa ..
BF545C ,N-channel FETAPPLICATIONS• Impedance converters in e.g. electret microphones anddginfra-red detectorss• VHF ampl ..
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BF545A-BF545B-BF545C
N-channel FET
1. Product profile
1.1 General description

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
1.2 Features and benefits
Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A).
1.3 Applications
Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers.
1.4 Quick reference data

BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011 Product data sheet
Table 1. Quick reference data

VDS drain-source voltage - - 30 V
VGSoff gate-source cut-off
voltage =1 A; VDS =15V 0.4 - 7.8 V
IDSS drain current VGS =0V; VDS =15V
BF545A 2 - 6.5 mA
BF545B 6 - 15 mA
BF545C 12 - 25 mA
Ptot total power dissipation Tamb25 C- - 250 mW
yfs forward transfer
admittance
VGS =0V; VDS =15V 3 - 6.5 mS
NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
2. Pinning information

3. Ordering information

4. Marking

[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Table 2. Pinning
Table 3. Ordering information

BF545A - plastic surface mounted package; 3 leads SOT23
BF545B
BF545C
Table 4. Marking

BF545A 20*
BF545B 21*
BF545C 22*
NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
5. Limiting values

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead10 mm2.
6. Thermal characteristics

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead10 mm2.
Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 30 V
VGSO gate-source voltage open drain - 30 V
VGDO gate-drain voltage (DC) open source - 30 V forward gate current (DC) - 10 mA
Ptot total power dissipation Tamb25C [1] -250 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
Table 6. Thermal characteristics

Rth(j-a) thermal resistance from junction to
ambient
[1] 500 K/W
NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
7. Static characteristics
Table 7. Static characteristics
Tj = 25 C unless otherwise specified.
V(BR)GSS gate-source breakdown voltage IG=1 A; VDS =0V 30 --V
VGSoff gate-source cut-off voltage ID= 200 A; VDS =15V
BF545A 0.4 - 2.2 V
BF545B 1.6 - 3.8 V
BF545C 3.2 - 7.8 V =1 A; VDS =15V 0.4 - 7.5 V
IDSS drain current VGS =0V; VDS =15V
BF545A 2 - 6.5 mA
BF545B 6 - 15 mA
BF545C 12 - 25 mA
IGSS gate-source leakage current VGS= 20 V; VDS =0V - 0.5 1000 pA
VGS= 20 V; VDS =0V; =125C 100 nA
yfs forward transfer admittance VGS =0V; VDS =15V 3 - 6.5 mS
yos common source output
admittance
VGS =0V; VDS =15V - 40 - S
NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
8. Dynamic characteristics

Table 8. Dynamic characteristics

Tamb = 25 C unless otherwise specified.
Ciss input capacitance VDS =15V; f=1MHz
VGS= 10V - 1.7 - pF
VGS =0V - 3 - pF
Crss reverse transfer capacitance VDS =15V; f=1MHz
VGS= 10V - 0.8 - pF
VGS=0V - 0.9 - pF
gis common source input
conductance
VDS =10V; ID =1 mA= 100 MHz - 15 - S= 450 MHz - 300 - S
gfs common source transfer
conductance
VDS =10V; ID =1mA= 100 MHz - 2 - mS= 450 MHz - 1.8 - mS
grs common source reverse
conductance
VDS =10V; ID =1 mA= 100 MHz - 6- S= 450 MHz - 40 - S
gos common source output
conductance
VDS =10V; ID =1 mA= 100 MHz - 30 - S= 450 MHz - 60 - S
NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)

NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)

NXP Semiconductors BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
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