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BF414SIEMENSN/a1660avaiNPN Silicon RF Transistor


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BF414
NPN Silicon RF Transistor
SIEMENS
NPN Silicon RF Transistor BF 414
o For low-noise, common base
VHF and FM stages
'rice"
Type Marking Ordering Code Pin Configuration Package')
BF 414 - Q62702-F517 C B TO-92
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEo 30 V
Collector-base voltage VCBo 40
Emitter-base voltage VEBO 4
Collector current Ic 25 mA
Base current hs 3
Total power dissipation, TA s: 45 ( Ptot 300 mW
Junction temperature T, 150 (
Storage temperature range Tstg - 55 ... + 150
Thermal Resistance
Junction - ambient RthJA f 350 K/W
1) For detailed information see chapter Package Outlines.
Semiconductor Group
SIEMENS; BF 414
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 30 - - V
fc = 2 mA, hs = O
Collector-base breakdown voltage V(BR)CBO 40 - -
IC = 10 11A, IE = 0
Emitter-base breakdown voltage V(BR) E80 4 - -
hs = 10 WA
Collector cutoff current [030 - - 60 nA
Vca = 20 V
DC current gain he 30 80 - -
IC=4mA, VCE-- 10V
AC Characteristics
Transition frequency f MHz
10: 1mA,VCE=1OV,f=1OO MHz - 400 -
Ic.--. 5mA,rtE=10V,f=100 MHz - 560 -
Collector-emitter capacitance Cce - 0.1 - pF
VcE=10V,VBE--0V,f--1MHz
Noise figure F - 3 - dB
[c = 5 mA, VCE = 10 V,f= 100 MHz
Rs = 60 Q
Semiconductor Group 2
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